Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1991-04-30
1993-01-19
McCamish, Marion E.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430325, 430942, G03C 550
Patent
active
051806533
ABSTRACT:
An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.
REFERENCES:
patent: 4189323 (1980-02-01), Buhr
patent: 4581321 (1986-04-01), Stahlhofen
patent: 4801519 (1989-01-01), Koibuchi et al.
patent: 5057397 (1991-10-01), Miyabe et al.
Kohara Hidekatsu
Miyabe Masanori
Nakayama Toshimasa
McCamish Marion E.
RoDee C. D.
Tokyo Ohka Kogyo Co. Ltd.
LandOfFree
Electron beam-curable resist composition and method for fine pat does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electron beam-curable resist composition and method for fine pat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron beam-curable resist composition and method for fine pat will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-101675