Electrolytic copper plating method, phosphorous copper anode...

Details Electrolytic copper plating method, phosphorous copper anode... Electrolytic copper plating method, phosphorous copper anode...

2006-11-21

2006-11-21

Wong, Edna (Department: 1753)

Chemistry: electrical and wave energy

Apparatus

Electrolytic

C204S291000, C204S293000, C205S291000, C205S292000

Reexamination Certificate

active

07138040

ABSTRACT:
An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 μm when the anode current density during electrolysis is 3 A/dm2or more, and making the grain size of the phosphorous copper anode 5 to 1500 μm when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.

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Kalev et al., “Production of Phosphorus-Containing Copper Anodes by Counter-Pressure Casting”, Tekhnicheska Misul (no month, 1982), vol. 19, No. 1, pp. 101-107. Abstract Only.
Patent Abstracts of Japan, One page English Abstract of JP 2001-192890.
Patent Abstracts of Japan, One page English Abstract of JP 2002-173795.
Co-Pending U.S. Appl. No. 09/980,947 filed on Dec. 5, 2001, will issue on May 13, 2003.

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