Electroless plating method and semiconductor wafer on which...

Details Electroless plating method and semiconductor wafer on which... Electroless plating method and semiconductor wafer on which...

2007-02-20

2007-02-20

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21175, C438S678000

Reexamination Certificate

active

10472678

ABSTRACT:
It is an object of the present invention to provide a semiconductor wafer on which a thin, smooth, uniform and good adhesive electroless plating layer that can be suitable for a seed layer is formed, and to provide an electroless plating method which is suitable for use in the manufacture of such a semiconductor wafer.A semiconductor wafer is coated with a silane coupling agent which has a functional group that is able to capture a metal, and is further coated with an organic-solvent solution of a palladium compound such as palladium chloride or the like. Afterward, the wafer is electroless plated. As a result of such an electroless plating method, a semiconductor wafer having a thickness of 70 to 5000 angstroms and a mean surface roughness Ra of 10 to 100 angstroms can be obtained.

REFERENCES:
patent: 5160452 (1992-11-01), Marutsuka et al.
patent: 5685898 (1997-11-01), Dupuis et al.
patent: 6284309 (2001-09-01), Bishop et al.
patent: 6767828 (2004-07-01), Andry et al.
patent: 2001/0012869 (2001-08-01), Fukushima et al.
patent: 2002/0036143 (2002-03-01), Segawa et al.
patent: 2002/0132056 (2002-09-01), Montano et al.
patent: 0 347 114 (1989-12-01), None
patent: 0 506 993 (1992-10-01), None
patent: 1 375 699 (2004-01-01), None
patent: 51-90938 (1976-08-01), None
patent: 1-315334 (1989-12-01), None
patent: 10-326957 (1998-12-01), None
patent: 10-326957 (1998-12-01), None
patent: 11-510219 (1999-09-01), None
patent: 2000-129211 (2000-05-01), None
patent: 2000-349417 (2000-12-01), None
patent: 2001-181853 (2001-07-01), None
patent: 2001-230527 (2001-08-01), None
patent: 2001-323381 (2001-11-01), None
patent: 2001-355074 (2001-12-01), None
patent: 2002-0075884 (2002-10-01), None
patent: WO 02/077321 (2002-10-01), None
IBM Tech. Discl. Bull. NN68031580, Mar. 1968, vol. 10, Num. 10, p. 1580.

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