Electroless nickel immersion gold semiconductor flip chip...

Details Electroless nickel immersion gold semiconductor flip chip... Electroless nickel immersion gold semiconductor flip chip...

2006-01-31

2006-01-31

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257S737000, C257S734000, C257S780000, C257S772000, C257S668000, C257S692000, C257S693000, C257S762000, C257S766000, C257S765000, C174S256000, C174S260000, C174S259000, C174S261000, C029S830000, C228S262600, C361S767000, C361S768000, C361S771000, C361S783000

Reexamination Certificate

active

06992397

ABSTRACT:
A flip chip package, apparatus and technique in which a ball grid array composed of a doped eutectic Pb/Sn solder composition is used. The dopant in the Pb/Sn solder forms a compound or complex with the phosphorous residue from the electroless nickel plating process that is mixable with the Pb/Sn solder. The phosphorous containing compound or complex prevents degradation of the solder/under bump metallization bond associated with phosphorus residue. The interfacial solder/under bump metallization bond is thereby strengthened. This results in fewer fractured solder bonds and greater package reliability.

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Goyal, et al, “Failure Mechanism of Brittle Solder Joint Fracture in the Presence of Electroless Nickel Immersion Gold (ENIG) Interface”, Proceedings of the 52ndElectronic Component and Technology Conference, 732-739, May 2002.
Binary Alloy Phase Diagrams Binary Alloy Phase Diagrams, 2nded, Dec. 1990, T.B.B. Massalski (Editor), L. Kacprzak (Editor), H. Okamoto (Editor), P.R. Subramanian (Editor), pp. 2269, 2642, 2644, 2294, 2996, 1449, 1451, 1746-1748.

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