Electroless copper fill process

Details Electroless copper fill process Electroless copper fill process

2005-10-11

2008-11-25

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C438S700000, C257SE21170, C257SE21174, C257SE21548, C257SE21549

Reexamination Certificate

active

07456102

ABSTRACT:
Disclosed is a procedure for bottom-up fill of electroless copper film in sub-micron integrated circuit features. By repeatedly placing an integrated circuit wafer in an electroless bath, a transient period of time of accelerated growth in the feature is repeated to achieve many small layers of deposition, each of which is thicker near the base of the feature. The net result is filing of the feature from the bottom-up fill without formation of voids. The electroless bath employed to form the continuous electroless copper film may include a reducing agent, a complexing agent, a source of copper ions, a pH adjuster, and optionally one or more surfactants and/or stabilizers.

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