Electrode with domes for plasma focusing

Details Electrode with domes for plasma focusing Electrode with domes for plasma focusing

1995-12-29

2000-01-04

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

438729, 156345, 118723E, H05H 100

Patent

active

060106360

ABSTRACT:
An improved anode design, incorporating domes, for plasma reactors enhances plasma density at the anode. The domes give rise to a high-divergence, three-dimensional electric field distribution that accelerates electrons to a focused central region in the dome, thereby increasing ionization and dissociation. The enhanced plasma density increases the reaction rate at a substrate opposite the anode.

REFERENCES:
patent: 4230515 (1980-10-01), Zajac
patent: 5248371 (1993-09-01), Maher et al.
patent: 5439524 (1995-08-01), Cain et al.
Bogle-Rohwer, Elizabeth et al., "Wall Profile Control in a Triode Etcher", Solid State Technology, Apr., 1985, pp. 251-255.
Singh, B. et al., "Hollow Anode Discharge Based High Efficiency RF Triode Reactor", paper presented at the 45th Annual Gaseous Electronics Conference, 27-30 Oct. Boston, Massachusetts.

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