Electrode structure having at least two oxide layers and...

Details Electrode structure having at least two oxide layers and... Electrode structure having at least two oxide layers and...

2007-01-19

2008-08-26

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S223000, C257S229000, C257S368000, C257SE21011, C257SE21047

Reexamination Certificate

active

07417271

ABSTRACT:
An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

REFERENCES:
patent: 5003428 (1991-03-01), Shepherd
patent: 6617628 (2003-09-01), Kim
patent: 2005/0199961 (2005-09-01), Hoffman et al.

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