Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-08-13
2010-06-22
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S343000, C257S375000, C257S376000, C257SE21379, C257SE21544, C257SE21696
Reexamination Certificate
active
07741680
ABSTRACT:
The present invention relates to a semiconductor device including a substrate layer, a metal-oxide-semiconductor field-effect transistor (MOSFET), a backgate region, an isolation layer and a diode. The MOSFET includes a gate region, a source region and a drain region. The source and drain regions are embedded in the backgate region, which includes a voltage input terminal. The isolation layer is located between the backgate region and the substrate layer and has a doping type opposite that of the backgate region. The diode includes a first terminal connected to the isolation layer and a second terminal coupled to an isolation voltage source.
REFERENCES:
patent: 4825275 (1989-04-01), Tomassetti
patent: 6160304 (2000-12-01), Ludikhuize
patent: 6600199 (2003-07-01), Voldman et al.
patent: 11-87692 (1999-03-01), None
patent: 2002015199 (2002-02-01), None
PCT International Search Report and Written Opinion for PCT/US2009/50524 mailed on Sep. 3, 2009.
Foley David
Zhu Haiyang
Analog Devices Inc.
Kenyon & Kenyon LLP
Sefer A.
LandOfFree
Electro-static discharge and latchup resistant semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electro-static discharge and latchup resistant semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electro-static discharge and latchup resistant semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4158735