Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-30
2007-10-30
Potter, Roy (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000
Reexamination Certificate
active
10761607
ABSTRACT:
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
REFERENCES:
patent: 6521525 (2003-02-01), Yamanaka et al.
patent: 6593235 (2003-07-01), Uochi et al.
Choi Beom-Rak
Choi Joon-Hoo
Huh Jong-Moo
Joo In-Su
F. Chau & Assoc. LLC
Potter Roy
Samsung Electronics Co,. Ltd.
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