Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2007-12-27
2011-10-18
Im, Junghwa M (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S419000, C257S432000, C257S433000, C257S254000, C257S414000, C257S415000, C257SE29324
Reexamination Certificate
active
08039910
ABSTRACT:
An electro-acoustic sensing device including a sensing chip, a carrier chip and a sealing element is provided. The sensing chip is for electro-acoustic transuding and thereby outputting an electrical signal. The carrier chip disposed below the sensing chip has at least one second connecting point, at least one electrical channel and at least one channel connecting point. The second connecting point is electrically contacted with the first connecting point. The second connecting point and the channel connecting point are located at different surfaces of the carrier chip. The electrical channel passes through the carrier chip and electrically connects the second connecting point and the channel connecting point. The electrical signal is transmitted to the channel connecting point via the first and the second connecting points and the electrical channel. The sealing element is disposed between the sensing chip and the carrier chip for air-tight coupling the two chips.
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Taiwanese language office action dated Feb. 24, 2011.
Chen Jen-Yi
Sung Po-Hsun
Yen Kai-Hsiang
Im Junghwa M
Industrial Technology Research Institute
Thomas|Kayden
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