Electrically programmable memory element with reduced area...

Details Electrically programmable memory element with reduced area... Electrically programmable memory element with reduced area...

2006-08-15

2006-08-15

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07092286

ABSTRACT:
A programmable resistance memory element having a conductive layer as an electrode. The conductive layer and memory material may have a small area of contact. In one embodiment, the conductive layer may be cup-shaped. In one embodiment, the memory element may include a chalcogenide material.

REFERENCES:
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5854102 (1998-12-01), Gonzalez et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6423621 (2002-07-01), Doan et al.

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