Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
Inventor
active
Composite memory material comprising a mixture of phase-change m
Compositionally modified resistive electrode
Electrically erasable memory elements characterized by reduced c
Electrically erasable, directly overwritable, multibit single ce
Electrically programmable memory element
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Profile ID: LFUS-PAI-P-435204