Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2003-10-07
2008-08-19
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S237000
Reexamination Certificate
active
07413945
ABSTRACT:
A method of forming an active device is provided. The method includes performing a first patterning operation on a first plurality of layers. This first patterning operation defines a first feature of the active device. Then, a second patterning operation can be performed on at least one layer of the first plurality of layers. This second patterning operation defines a second feature of the active device. Of importance, the first and second patterning operations are performed substantially back-to-back, thereby ensuring that the active device can accurately function.
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Bhatia Manish
Cleeves James M.
Knall N. Johan
Vyvoda Michael A.
Dugan & Dugan PC
SanDisk 3D LLC
Schillinger Laura M.
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