Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-04-08
1998-01-06
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041923, 20429806, 20429811, C23C 1434
Patent
active
057050422
ABSTRACT:
Disclosed is a collimator, where the collimator is mounted within a sputter chamber and is interposed between a sputter target and a wafer to be coated with a thin film of the sputtered material. The collimator of the present invention is preferably mounted within the sputter chamber in an insulated manner so that the collimator is electrically insulated from the chamber and the collimator is able to take on a floating electrical potential of the plasma generated within the sputter chamber. The wafer is preferably rf-biased to effectuate a selective, reduced-rate sputtering of portions of the deposited film to inhibit premature pinch off by the film of recessed areas of the wafer.
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Tetsuya, et al. Patent Abstracts of Japan, vol. 18, No. 215 (C-1191), Publication No. 6-10125, Jan. 18, 1994.
Elliot Richard L.
Leiphart Shane P.
Micro)n Technology, Inc.
Weisstuch Aaron
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