Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1996-07-10
1998-04-07
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419212, 20429806, 20429808, 20429814, C23C 1434
Patent
active
057360219
ABSTRACT:
In a plasma reactor, especially one intended for physical vapor deposition (PVD) onto semiconductor substrates, a shield disposed in front of the chamber walls between the PVD target and the substrates to protect the chamber walls. According to the invention, the shield is left electrically floating so that electrically charged ions and electrons emanating from the plasma or target and impinging upon the shield charge it to the point that the electrical flux is repelled.
REFERENCES:
patent: 4132613 (1979-01-01), Penfold et al.
patent: 4169031 (1979-09-01), Brors
patent: 4362611 (1982-12-01), Logan et al.
patent: 4897172 (1990-01-01), Katsura et al.
patent: 5135634 (1992-08-01), Clarke
patent: 5215638 (1993-06-01), Hausler
patent: 5228968 (1993-07-01), Zejda
patent: 5294320 (1994-03-01), Somekh et al.
patent: 5334298 (1994-08-01), Gegenwart
patent: 5419029 (1995-05-01), Raaijmakers
patent: 5470451 (1995-11-01), Kobayashi et al.
patent: 5527439 (1996-06-01), Sieck et al.
patent: 5538603 (1996-07-01), Guo
Ding Peijun
Fu Jianming
Xu Zheng
Applied Materials Inc.
Guenzer Charles S.
Nguyen Nam
Verplancken Donald E.
LandOfFree
Electrically floating shield in a plasma reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically floating shield in a plasma reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically floating shield in a plasma reactor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-9556