Electrically erasable programmable read-only memory cell and...

Details Electrically erasable programmable read-only memory cell and... Electrically erasable programmable read-only memory cell and...

2008-07-29

2008-07-29

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000

Reexamination Certificate

active

07405123

ABSTRACT:
A manufacturing method and a device of an EEPROM cell are provided. The method includes the following steps. First, a tunnel layer and an inter-gate dielectric layer are formed over a surface of a substrate respectively, and a doped region is formed in the substrate under the inter-gate dielectric layer and used as a control gate. Thereafter, a floating gate is formed over the inter-gate dielectric layer and the tunnel layer. Thereafter, a source region and a drain region are formed in the substrate beside two sides of the floating gate under the tunnel layer. Especially, the manufacturing method of the memory cell can be integrated with the manufacturing process of high operation voltage component and low operation voltage component.

REFERENCES:
patent: 5936276 (1999-08-01), Maurelli et al.

Affiliated with

Also associated with

Rating

Electrically erasable programmable read-only memory cell and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable programmable read-only memory cell and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable programmable read-only memory cell and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2806178