Static information storage and retrieval – Read/write circuit – Erase
Patent
1993-04-08
1994-03-15
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Erase
36518901, 365900, G11C 1300
Patent
active
052951081
ABSTRACT:
An electrically erasable and programmable read only memory device is responsive to an external command signal for selectively executing an erasing operation, a write-in operation and a verifying operation, and a controller is incorporated in the electrically erasable and programmable read only memory device for producing internal control signals from the external command signal, wherein the external command signal is split into higher order bits and lower order bits both indicative of the external command, and the controller compares the higher order bits with the lower order bits so as to exactly discriminate the external command.
REFERENCES:
patent: 5218607 (1993-06-01), Saito et al.
"28F001BX-T/28F001BX-B 1M(128K.times.8) CMOS Flash Memory", Intel Corporation, Mar. 1991, pp. 1-28.
Fears Terrell W.
NEC Corporation
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