Electrically erasable and programmable non-volatile memory cell

Details Electrically erasable and programmable non-volatile memory cell Electrically erasable and programmable non-volatile memory cell

2005-04-05

2005-04-05

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

06876033

ABSTRACT:
An electrically erasable and programmable memory cell is provided. The memory cell includes a floating gate MOS transistor and a bipolar transistor for injecting an electric charge into the floating gate. The floating gate transistor has a source region and a drain region formed in a first well with a channel defined between the drain and source regions, a control gate region, and a floating gate extending over the channel and the control gate region. The bipolar transistor has an emitter region formed in the first well, a base region consisting of the first well, and a collector region consisting of the channel. The memory cell includes a second well that is insulated from the first well, and the control gate region is formed in the second well. Further embodiments of the present invention provide a memory including at least one such memory cell, an electronic device including such a memory, and methods of integrating a memory cell and erasing a memory cell.

REFERENCES:
patent: 5872732 (1999-02-01), Wong
patent: 5896315 (1999-04-01), Wong
patent: 5936276 (1999-08-01), Maurelli et al.
patent: 6013552 (2000-01-01), Oyama
patent: 6025625 (2000-02-01), Chi
patent: 6277689 (2001-08-01), Wong
patent: 1091408 (2001-04-01), None
patent: WO 9847150 (1998-10-01), None
European Search Report for European Application No. 02425416.

Affiliated with

Also associated with

Rating

Electrically erasable and programmable non-volatile memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable and programmable non-volatile memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable and programmable non-volatile memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3412445