Electrically driven optical proximity correction

Details Electrically driven optical proximity correction Electrically driven optical proximity correction

2011-01-04

2011-01-04

Whitmore, Stacy A (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

07865864

ABSTRACT:
An approach that provides electrically driven optical proximity correction is described. In one embodiment, there is a method for performing an electrically driven optical proximity correction. In this embodiment, an integrated circuit mask layout representative of a plurality of layered shapes each defined by features and edges is received. A lithography simulation is run on the mask layout. An electrical characteristic is extracted from the output of the lithography simulation for each layer of the mask layout. A determination as to whether the extracted electrical characteristic is in conformance with a target electrical characteristic is made. Edges of the plurality of layered shapes in the mask layout are adjusted in response to determining that the extracted electrical characteristic for a layer in the mask layout fails to conform with the target electrical characteristic.

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