Electrically conductive structure on a semiconductor...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21590

Reexamination Certificate

active

08067305

ABSTRACT:
Provided are methods for forming an electrically conductive structure of a desired three-dimensional shape on a substantially planar surface of a substrate, e.g., a semiconductor wafer. Typically, the particulate matter is deposited in a layer-by-layer manner and adhered to selected regions on the substrate surface. The particulate matter may be deposited to produce a mold for forming the structure and/or to produce the structure itself. A three-dimensional printer with associated electronic data may be used without the need of a lithographic mask or reticle.

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patent: 5510066 (1996-04-01), Fink et al.
patent: 5807437 (1998-09-01), Sachs et al.
patent: 5997795 (1999-12-01), Danforth et al.
patent: 6146567 (2000-11-01), Sachs et al.
patent: 6401001 (2002-06-01), Jang et al.
patent: 7202155 (2007-04-01), Fukuchi
patent: 2005/0037614 (2005-02-01), Fukuchi
patent: 2007/0175296 (2007-08-01), Subramanian et al.
patent: 01/96048 (2001-12-01), None
patent: 2008/073297 (2008-06-01), None

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