Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-11-16
2008-12-02
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S781000, C257SE23021, C257SE23069, C257SE21508, C438S614000
Reexamination Certificate
active
07459785
ABSTRACT:
An electrical interconnection structure. The electrical structure comprises a substrate comprising electrically conductive pads and a first dielectric layer over the substrate and the electrically conductive pads. The first dielectric layer comprises vias. A metallic layer is formed over the first dielectric layer and within the vias. A second dielectric layer is formed over the metallic layer. A ball limiting metallization layer is formed within the vias. A photoresist layer is formed over a surface of the ball limiting metallization layer. A first solder ball is formed within a first opening in the photoresist layer and a second solder ball is formed within a second opening in the photoresist layer.
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Daubenspeck Timothy Harrison
Gambino Jeffrey Peter
Muzzy Christopher David
Sauter Wolfgang
International Business Machines - Corporation
Sabo William D.
Schmeiser Olsen & Watts
Thomas Toniae M.
Wilczewski M.
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