Electrical antifuse having a multi-thickness dielectric layer

Details Electrical antifuse having a multi-thickness dielectric layer Electrical antifuse having a multi-thickness dielectric layer

2008-08-06

2010-11-02

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S406000

Reexamination Certificate

active

07825479

ABSTRACT:
An electrical antifuse comprising a field effect transistor includes a gate dielectric having two gate dielectric portions. Upon application of electric field across the gate dielectric, the magnitude of the electrical field is locally enhanced at the boundary between the thick and thin gate dielectric portions due to the geometry, thereby allowing programming of the electrical antifuse at a lower supply voltage between the two electrodes, i.e., the body and the gate electrode of the transistor, across the gate dielectric.

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