eFuse and methods of manufacturing the same

Details eFuse and methods of manufacturing the same eFuse and methods of manufacturing the same

2005-11-03

2010-02-09

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE23149

Reexamination Certificate

active

07659168

ABSTRACT:
In a first aspect, a first apparatus is provided. The first apparatus is an eFuse including (1) a semiconducting layer above an insulating oxide layer of a substrate; (2) a diode formed in the semiconducting layer; and (3) a silicide layer formed on the diode. Numerous other aspects are provided.

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