eFuse and methods of manufacturing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE23149

Reexamination Certificate

active

07659168

ABSTRACT:
In a first aspect, a first apparatus is provided. The first apparatus is an eFuse including (1) a semiconducting layer above an insulating oxide layer of a substrate; (2) a diode formed in the semiconducting layer; and (3) a silicide layer formed on the diode. Numerous other aspects are provided.

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patent: 2007/0026579 (2007-02-01), Nowak et al.

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