EEPROM programming switch

Details EEPROM programming switch EEPROM programming switch

1988-01-20

1989-04-18

Miller, Stanley D.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

307577, 307578, 307581, 307443, 307448, 307450, G11C 702, H03K 17687, H03K 19017

Patent

active

048233170

ABSTRACT:
An EEPROM programming switch includes a first enhancement mode field effect transistor interconnected between a word line and a programming voltage potential, and a second enhancement mode field effect transistor connected between a charge pump node and the programming voltage. The gate electrode of the first transistor is connected to the charge pump node and the gate electrode of the second transistor is connected to the word line. Decoding means is providing for preventing charge accumulation of the word line when the word line is not selected and for permitting charge accumulation of the word line when the word line is selected for programming.

Affiliated with

Also associated with

Rating

EEPROM programming switch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM programming switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM programming switch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2400523