EEPROM device with substrate hot-electron injector for...

Details EEPROM device with substrate hot-electron injector for... EEPROM device with substrate hot-electron injector for...

2005-03-22

2005-03-22

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000

Reexamination Certificate

active

06870213

ABSTRACT:
A low programming power, high speed EEPROM device is disclosed which is adapted for large scale integration. The device comprises a body, a source, a drain, and it has means for injecting a programming current into the body. The hot carriers from the body enter the floating gate with much higher efficiency than channel current carriers are capable of doing. The drain current of this device is controlled by the body bias. The device is built on an insulator, with a bottom common plate, and a top side body. These features make the device ideal for SOI and thin film technologies.

REFERENCES:
patent: 5838617 (1998-11-01), Bude et al.
patent: 6509603 (2003-01-01), Lin et al.
patent: 6614072 (2003-09-01), Sandhu et al.
patent: 6631087 (2003-10-01), Di Pede
patent: 6734490 (2004-05-01), Esseni et al.

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