Programmable memory devices supported by semiconductor...

Details Programmable memory devices supported by semiconductor... Programmable memory devices supported by semiconductor...

2005-03-29

2005-03-29

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

06873005

ABSTRACT:
The invention includes a memory device supported by a semiconductor substrate and comprising in ascending order from the substrate: a floating gate, a dielectric material, a layer consisting essentially of tungsten nitride, a first mass consisting essentially of tungsten, and a second mass consisting essentially of one or more nitride compounds. The invention includes a memory device having a floating gate and a dielectric material over the floating gate. The device has a mass consisting essentially of tungsten over the dielectric material, with the mass having a pair of opposing sidewalls. A pair of sidewall spacers are along the opposing sidewalls of the mass. The sidewall spacers comprise a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer. The invention includes methods of making memory devices.

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