Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-23
2008-08-05
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S391000, C257S401000
Reexamination Certificate
active
07408230
ABSTRACT:
Provided is an EEPROM device and a method of manufacturing the same. The EEPROM device is composed of one cell including a memory transistor and a selection transistor located in series on a semiconductor substrate, and includes a source region located on a side region of a memory transistor, a drain region located on one side region of the selection transistor facing the source region, and a floating junction region formed between the memory transistor and the selection transistor, wherein the floating junction region includes a first doped region extended toward the source region under a region occupied by the memory transistor and a second doped region doped with the opposite conductive dopant to the first doped region and formed to surround the first doped region.
REFERENCES:
patent: 5189497 (1993-02-01), Komori et al.
patent: 5243210 (1993-09-01), Naruke
patent: 5272098 (1993-12-01), Smayling et al.
patent: 5300803 (1994-04-01), Liu
patent: 5371027 (1994-12-01), Walker et al.
patent: 5726470 (1998-03-01), Sato
patent: 5780893 (1998-07-01), Sugaya
patent: 5894147 (1999-04-01), Cacharelis
patent: 5960283 (1999-09-01), Sato
patent: 5994733 (1999-11-01), Nishioka et al.
patent: 6232182 (2001-05-01), Sugaya
patent: 6255163 (2001-07-01), Zatelli et al.
patent: 6258668 (2001-07-01), Lee et al.
patent: 6274907 (2001-08-01), Nakagawa
patent: 6420769 (2002-07-01), Patelmo et al.
patent: 6657249 (2003-12-01), Nishioka et al.
patent: 6765258 (2004-07-01), Wu
patent: 6856001 (2005-02-01), Rhodes
patent: 6891221 (2005-05-01), Lee et al.
patent: 6943071 (2005-09-01), Fazio et al.
patent: 6967133 (2005-11-01), Amon et al.
patent: 2002/0040993 (2002-04-01), Patelmo et al.
patent: 2002/0153546 (2002-10-01), Verhaar
patent: 2002/0158285 (2002-10-01), Clementi et al.
patent: 2004/0017722 (2004-01-01), Cavaleri et al.
patent: 2004/0099860 (2004-05-01), Doris et al.
patent: 2004/0256658 (2004-12-01), Park et al.
patent: 2005/0051835 (2005-03-01), Kang et al.
patent: 2006/0076607 (2006-04-01), Kang
patent: 2002-305260 (2002-10-01), None
patent: 10-20030001096 (2003-01-01), None
Kang Sung-Taeg
Kim Seong-Gyun
Park Ji-Hoon
Park Sung-Woo
Seo Bo-Young
F. Chau & Assoc. LLC
Samsung Electronics Co,. Ltd.
Soward Ida M
LandOfFree
EEPROM device having first and second doped regions that... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with EEPROM device having first and second doped regions that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM device having first and second doped regions that... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3993759