EEPROM device having first and second doped regions that...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S314000, C257S316000, C257S391000, C257S401000

Reexamination Certificate

active

07408230

ABSTRACT:
Provided is an EEPROM device and a method of manufacturing the same. The EEPROM device is composed of one cell including a memory transistor and a selection transistor located in series on a semiconductor substrate, and includes a source region located on a side region of a memory transistor, a drain region located on one side region of the selection transistor facing the source region, and a floating junction region formed between the memory transistor and the selection transistor, wherein the floating junction region includes a first doped region extended toward the source region under a region occupied by the memory transistor and a second doped region doped with the opposite conductive dopant to the first doped region and formed to surround the first doped region.

REFERENCES:
patent: 5189497 (1993-02-01), Komori et al.
patent: 5243210 (1993-09-01), Naruke
patent: 5272098 (1993-12-01), Smayling et al.
patent: 5300803 (1994-04-01), Liu
patent: 5371027 (1994-12-01), Walker et al.
patent: 5726470 (1998-03-01), Sato
patent: 5780893 (1998-07-01), Sugaya
patent: 5894147 (1999-04-01), Cacharelis
patent: 5960283 (1999-09-01), Sato
patent: 5994733 (1999-11-01), Nishioka et al.
patent: 6232182 (2001-05-01), Sugaya
patent: 6255163 (2001-07-01), Zatelli et al.
patent: 6258668 (2001-07-01), Lee et al.
patent: 6274907 (2001-08-01), Nakagawa
patent: 6420769 (2002-07-01), Patelmo et al.
patent: 6657249 (2003-12-01), Nishioka et al.
patent: 6765258 (2004-07-01), Wu
patent: 6856001 (2005-02-01), Rhodes
patent: 6891221 (2005-05-01), Lee et al.
patent: 6943071 (2005-09-01), Fazio et al.
patent: 6967133 (2005-11-01), Amon et al.
patent: 2002/0040993 (2002-04-01), Patelmo et al.
patent: 2002/0153546 (2002-10-01), Verhaar
patent: 2002/0158285 (2002-10-01), Clementi et al.
patent: 2004/0017722 (2004-01-01), Cavaleri et al.
patent: 2004/0099860 (2004-05-01), Doris et al.
patent: 2004/0256658 (2004-12-01), Park et al.
patent: 2005/0051835 (2005-03-01), Kang et al.
patent: 2006/0076607 (2006-04-01), Kang
patent: 2002-305260 (2002-10-01), None
patent: 10-20030001096 (2003-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

EEPROM device having first and second doped regions that... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM device having first and second doped regions that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM device having first and second doped regions that... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3993759

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.