EEPROM and method for manufacturing EEPROM

Details EEPROM and method for manufacturing EEPROM EEPROM and method for manufacturing EEPROM

2009-09-21

2011-11-22

Landau, Matthew (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S265000, C438S266000, C438S264000, C438S593000, C438S595000, C257S316000, C257S321000

Reexamination Certificate

active

08063431

ABSTRACT:
An electrically erasable programmable read only memory (EEPROM) is disclosed. The EEPROM includes a tunneling region in a semiconductor substrate, a control gate region in the semiconductor substrate and separated from the tunneling region by a device isolating layer, a tunnel oxide layer in a trench in the semiconductor substrate between the tunneling region and the control gate region, and a polysilicon layer on the tunnel oxide layer.

REFERENCES:
patent: 7122432 (2006-10-01), Shimizu et al.

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