Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1998-09-18
2000-10-31
Nelms, David
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438697, 438704, 438756, 438761, 438763, 438790, 216 91, 216 38, H01L 21469
Patent
active
061402540
ABSTRACT:
A process for forming a nanoporous dielectric silica coating on a surface of a substrate. The process includes spin-depositing alkoxysilane composition onto a surface of a substrate; spin depositing a surface hydrophobizing agent or a solvent onto an edge portion of the substrate to thereby remove the alkoxysilane composition from that area; and then curing the alkoxysilane composition to form a nanoporous dielectric silica coating. In another embodiment, an alkoxysilane composition layer is deposited onto a surface of a substrate. Then a solvent for the alkoxysilane substantially removes a portion of the alkoxysilane layer on the edge portion of the surface. This results in a transfer or cascading of a quantity of the alkoxysilane from a region adjacent to the edge portion to form a relatively thinner layer of the alkoxysilane onto the edge portion of the substrate surface. Then the relatively thinner alkoxysilane layer is removed prior to curing the alkoxysilane.
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patent: 5955140 (1999-09-01), Smith et al.
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Endisch Denis H.
Ramos Teresa
Wu Hui-Jung
Allied-Signal Inc.
Hoang Quoc
Nelms David
Weise Leslie A.
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