EDA methodology for extending ghost feature beyond notched...

Details EDA methodology for extending ghost feature beyond notched... EDA methodology for extending ghost feature beyond notched...

2007-01-10

2010-10-05

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

C430S005000, C430S311000

Reexamination Certificate

active

07807343

ABSTRACT:
In accordance with various embodiments, semiconductor devices and methods of forming semiconductor devices having non-rectangular active regions are provided. An exemplary method includes using a first mask to form a plurality of first features over a non-rectangular shaped active region and at least one ghost feature, wherein the plurality of first features extend beyond an edge of the non-rectangular shaped active region. The method further includes using a second mask to remove a portion of the plurality of first features extending beyond the edge of the non-rectangular shaped active region and the at least one ghost feature.

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