ECR plasma process

Details ECR plasma process ECR plasma process

1993-09-24

1994-12-06

Breneman, R. Bruce

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156643, 427571, C23C 1400, C23C 1424, C23F 100

Patent

active

053707796

ABSTRACT:
A plasma process utilizing an electron cyclotron resonance (ECR) phenomenon caused by generating a magnetic field either parallel or perpendicular to, or both parallel and perpendicular to, a microwave propagation direction, characterized in that an ion beam is made to converge by applying a pulse voltage to a rotating magnetic field, a pulse voltage is applied to deflection plates, and an accelerating pulse voltage is further applied to a plasma.

REFERENCES:
patent: 4757237 (1988-07-01), Hellbolm et al.
patent: 5087857 (1992-02-01), Ahn
patent: 5208512 (1993-05-01), Forster et al.
Derwent Abstract of WO-8904217 dated May 18, 1989 (2 pages).
Patent Abstracts of Japan, vol. 17, No. 292 (E-1376) 4 Jun. 1993 & JP-A-50 21 392 (Fuji Electric Co. Ltd.) 29 Jan. 1993.
Patent Abstracts of Japan, vol. 13, No. 578 (E-864) 20 Dec. 1989 & JP-A-12 43 359 (Matsushita Electric Ind. Co. Ltd.).

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