Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1991-05-24
1994-01-11
King, Roy
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427570, 427577, 427569, 427575, 4272552, 4272557, 427284, 427402, B05D 306
Patent
active
052779394
ABSTRACT:
A method of forming a boron nitride containing film on a substrate is disclosed. The method includes disposing a substrate in a reaction chamber, inputting a reactive gas comprising boron and nitrogen into the reaction chamber, exciting the reactive gas in the reaction chamber by applying a DC biased, RF electric field thereto in the presence of a magnetic field, and depositing the boron nitride containing film on the substrate.
REFERENCES:
patent: 3540926 (1970-11-01), Rairden
patent: 3811940 (1974-05-01), Douglas et al.
patent: 4297387 (1981-10-01), Beale
patent: 4300989 (1981-11-01), Chang
patent: 4565741 (1986-01-01), Morimoto et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4714625 (1987-12-01), Chopra et al.
patent: 4732761 (1988-03-01), Machida et al.
patent: 4973494 (1990-11-01), Yamazaki
King Roy
Semiconductor Energy Laboratory Co,. Ltd.
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