Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-08-30
1998-09-22
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular biasing
36518903, 365201, H01L 2978
Patent
active
058124551
ABSTRACT:
A NAND EEPROM is disclosed which is capable of variously setting, for each chip, the voltage to be applied to the control gates of memory cells. The semiconductor chip includes a NAND memory cell array and a high-voltage generating circuit for generating data writing internal voltage VPP required when data is written on the memory cell array. Moreover, the semiconductor chip includes a set voltage selection circuit for arbitrarily setting the level of the voltage VPP generated by the high-voltage generating circuit for each chip and a multiplexer for extracting, to the outside of the chip, setting signal LTF which is a signal for enabling the level of the voltage VPP set arbitrarily.
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Iwata Yoshihisa
Oodaira Hideko
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
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