Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-01-17
2006-01-17
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S173000
Reexamination Certificate
active
06987691
ABSTRACT:
Techniques for improved semiconductor device performance are provided. In one aspect, a semiconductor device is provided. The device comprises at least one free magnetic layer, and a magnetic amplifier interacting with the free magnetic layer comprising two or more magnetic layers with at least one nonmagnetic layer therebetween. The nonmagnetic layer may be configured to provide parallel exchange coupling J of the magnetic layers in a range of0<J<4πt2MS2nyb,the magnetic layers having a long axis and a short axis, wherein t is a thickness of each magnetic layer, Msis magnetization, nyis a demagnetizing factor defined along the short axis of the magnetic layers and b is a diameter along a short axis of the magnetic layers. A method for switching a semiconductor device having at least one free magnetic layer is also provided.
REFERENCES:
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 6381171 (2002-04-01), Inomata et al.
patent: 6531723 (2003-03-01), Engel et al.
patent: 6831857 (2004-12-01), Amano et al.
Cheung, Esq. Wan Yee
Phung Anh
Ryan & Mason & Lewis, LLP
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