Early row address strobe (RAS) precharge

Static information storage and retrieval – Read/write circuit – Precharge

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Details

36518901, 36518912, G11C 700

Patent

active

052970914

ABSTRACT:
In a memory system, which includes a dynamic random access memory (DRAM) that has to be precharged before the contents thereof can be selectively read out into a static register, there is provided means for reading the memory contents of the memory cells of a part or the whole of a row of memory cells of the DRAM into the static register while concurrently precharging the DRAM for a subsequent read-out command. This reduces the overall cycle time of the memory array since read-out of the static register can occur during precharge.

REFERENCES:
patent: 4330852 (1982-05-01), Redwine et al.
patent: 4796231 (1989-01-01), Pinkham
patent: 4914630 (1990-04-01), Fujishima et al.
patent: 4987559 (1991-01-01), Miyauchi et al.
patent: 5042007 (1991-08-01), D'Luna

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