Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-03-22
2005-03-22
Alanko, Anita (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S700000, C438S706000, C438S710000, C438S725000
Reexamination Certificate
active
06869888
ABSTRACT:
A method for forming a semiconductor device is described. The method comprises forming a first layer over a semiconductor substrate. At least one hole is formed through the first layer. A bottom anti-reflective coating (BARC) layer is formed in the at least one hole. The BARC layer is exposed to an electron beam (e-beam) so that the BARC layer reaches a flow temperature in the at least one hole. An etch is performed to form a trench in the first layer and over the at least one hole, wherein the BARC layer in the at least one hole acts as an etch resistant layer during the etch.
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Lyons Christopher F.
Plat Marina V.
Singh Bhanwar
Subramanian Ramkumar
Advanced Micro Devices , Inc.
Alanko Anita
Foley & Lardner LLP
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