Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-02-14
2006-02-14
Tran, M. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S194000
Reexamination Certificate
active
06999354
ABSTRACT:
In an environment wherein a microprocessor can operate at several different voltage levels depending upon the instantaneous throughput of the microprocessor, a memory and memory adjustment circuit that permits operating the memory at a plurality of voltages in response to the microprocessor is disclosed. The memory and memory adjustment circuit sense the instantaneous operating voltage of the microprocessor and adjust the operating voltage of the memory in response thereto. The memory adjustment circuit more particularly increases or decreases the memory's bitline sense interval in response respectively to a decrease or increase in the memory's operating voltage.
REFERENCES:
patent: 6327202 (2001-12-01), Roohparvar
patent: 6724679 (2004-04-01), Nagasawa et al.
patent: 6795906 (2004-09-01), Matsuda
patent: 6804153 (2004-10-01), Yoshizawa et al.
patent: 6873555 (2005-03-01), Hiraki et al.
Aitken Robert C.
Gandhi Dhrumil
ARM Physical IP, Inc.
Martine & Penilla & Gencarella LLP
Tran M.
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