Dynamic type semiconductor memory

Details Dynamic type semiconductor memory Dynamic type semiconductor memory

1990-11-28

1993-07-13

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Precharge

365205, 365218, G11C 700

Patent

active

052276970

ABSTRACT:
A dynamic type semiconductor memory in which a bit line is made to be connected to an electric potential different from a precharge potential after a precharge of the bit line is effected and one of word lines is selected and before a sensing amplifier operates. Thereby, all data stored in memory cells of the same row address can be cleared or preset in a cycle. Further, data stored in all of memory cells of which the number is equal to that of row addresses multiplied by that of column addresses can be cleared or preset in cycles of which the number is equal to that of the row addresses. Consequently, a clearance of contents of or a presetting of all memory cells can be effected at a high speed.

REFERENCES:
patent: 4587629 (1986-05-01), Dill et al.
patent: 4601017 (1986-07-01), Mochizuki et al.
patent: 4858182 (1989-08-01), Pang et al.
patent: 4879686 (1989-11-01), Suzuki et al.

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