Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-10-11
2005-10-11
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S203000, C365S207000
Reexamination Certificate
active
06954389
ABSTRACT:
To provide a dynamic semiconductor storage device featuring reduced power consumption and faster operation of a sense amplifier. The drain of a transistor N7constituting an N-type sense amplifier NSAt is connected to a shared line SA, while the drain of a transistor N8is connected to a shared line /SA. The drain of a transistor N9constituting an N-type sense amplifier NSAb is connected to a shared line SA, while the drain of a transistor N10is connected to a shared line /SA. The threshold voltages of transistors N7to N10range from 0.2V to 0.3V, which are lower than a threshold voltage of transistors P1to P3. A supply voltage Vdd is applied to the gates of isolators BLIt and BLIb to clamp the supply voltage Vdd by the isolators BLIt and BLIb so as to set the internal voltage of an array to 0.8V, which is lower than the supply voltage Vdd by the threshold voltage of transistors N3to N6.
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Dinh Son T.
International Business Machines - Corporation
Walsh Robert A.
LandOfFree
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