Dynamic semiconductor storage device and method for...

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S207000

Reexamination Certificate

active

07616510

ABSTRACT:
The object of the present invention is to provide a DRAM, in which the operation speed for a sense amplifier can be increased. Bit line precharging circuits PCt and PCb are arranged to precharge bit lines BLt and /BLt to a ground voltage GND, and reference word lines RWLo and RWLe and reference memory cells RMC are arranged, so that when a word line WL is activated, a potential difference is always generated between the bit lines BLt and /BLt. The sources of transistors N10and N11of an N-type sense amplifier NSAt are connected directly to a ground terminal GND, and the sources of transistors P2and P3of a P-type sense amplifier PSA are connected directly to a power source VDD. The gates of the transistors N10and N11are connected to the bit lines /BLt and BLt, and the drains are connected to the bit lines BLt and /BLt, respectively. Shift word lines SWL and shift memory cells SMC are arranged, so that the N sense amplifier NSAt can amplify the potential difference between the bit lines BLt and /BLt.

REFERENCES:
patent: 5475639 (1995-12-01), Iwase et al.
patent: 6191979 (2001-02-01), Uekubo
patent: 2005/0050439 (2005-03-01), Oresick et al.
patent: 2007/0242543 (2007-10-01), Romanovskyy et al.
patent: 11242966 (1999-07-01), None
patent: 2001084767 (2008-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dynamic semiconductor storage device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic semiconductor storage device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic semiconductor storage device and method for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4110425

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.