Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent
1985-12-09
1988-07-19
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
365203, G11C 700
Patent
active
047589876
ABSTRACT:
According to a dynamic random access memory of the invention, memory cell word lines are provided substantially perpendicular to bit lines. Memory cells are provided at intersections of the bit lines and the memory cell word lines. Sense-amplifiers are connected to the bit line pair. Static memory cell are also connected to the bit lines and serves as an auxiliary memory. When a memory cell word line is selected, the static memory cells statically hold data voltages stored in an array of memory cells connected to the selected word line until another word line is selected. Thus, during a pre-charge period of the bit lines, the data voltages can be stored in the static memory cells. Therefore, even during the pre-charge period, data read/write is enabled.
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Bowler Alyssa H.
Hecker Stuart N.
Kabushiki Kaisha Toshiba
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