Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-01-23
2007-01-23
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S227000, C365S228000, C365S229000
Reexamination Certificate
active
11015391
ABSTRACT:
A dynamic semiconductor memory device includes a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit line pairs. A mode setting portion receives a mode setting code applied from an external portion to generate a power saving mode control signal for a power saving mode of operation responsive to a mode setting command. An address control portion decodes an address applied from an external portion or a refresh address to select one of the plurality of the word lines during a normal mode operation. The address control portion also selects a predetermined number of bits of the address during a power saving mode of operation. The semiconductor memory device, therefore extends the refresh cycle while reducing the refresh time resulting in a lower power consumption.
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Han Kyu-Han
Kyung Kye-Hyun
Elms Richard
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Wendler Eric J.
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