Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-09-28
2011-11-15
Thomas, Tom (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S655000, C438S651000, C257SE21159
Reexamination Certificate
active
08058167
ABSTRACT:
A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
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Larson John M.
Snyder John P.
Avolare 2, LLC
King Daivd J.
Lemaire Charles A.
Lemaire Patent Law Firm, P.L.L.C.
Reames Matthew
LandOfFree
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