Static information storage and retrieval – Read/write circuit – With shift register
Reexamination Certificate
2005-10-11
2005-10-11
Phan, Trong (Department: 2818)
Static information storage and retrieval
Read/write circuit
With shift register
C365S222000, C365S230030
Reexamination Certificate
active
06954387
ABSTRACT:
In a DRAM, which includes a plurality of memory banks, there is a pair of separate flag bit registers for each bank with the flag bit registers that are shifted up/down respectively. A comparator for each bank provides a comparator output. An arbiter for each bank is connected to receive a flag bit up signal and a flag bit down signal from the flag bit registers for that bank and the comparator output from the comparator for that bank. The arbiters are connected to receive a conflict in signal and to provide a conflict out signal. The pair of flag bit registers represent a refresh status of each bank and designate memory banks or arrays that are ready for a refresh operation.
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Fredeman Gregory J.
Golz John
Hanson David R.
Kim Hoki
Kirihata Toshiaki
Jones Graham S.
Schnurmann H. Daniel
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