Dynamic random access memory trench capacitors

Details Dynamic random access memory trench capacitors Dynamic random access memory trench capacitors

2004-09-23

2008-08-05

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S222000, C257S225000

Reexamination Certificate

active

07408214

ABSTRACT:
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

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