Dynamic random access memory (DRAM)

Details Dynamic random access memory (DRAM) Dynamic random access memory (DRAM)

2005-11-09

2008-10-14

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000

Reexamination Certificate

active

07435645

ABSTRACT:
A dynamic random access memory (DRAM) includes a substrate, an active device and a deep trench capacitor. A trench and a deep trench are formed in the substrate. The active device is disposed on the substrate. The active device includes a gate structure and a doped region. The gate structure is disposed on the substrate and fills the trench. The doped region is disposed in the substrate at a first side of the gate structure. The deep trench capacitor is disposed in the deep trench of the substrate at a second side of the gate, and the second side is opposite to the first side. In addition, an upper electrode of the deep trench capacitor is adjacent to the bottom of the trench.

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