Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-04-26
2005-04-26
Lam, David (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230060, C365S189050
Reexamination Certificate
active
06885603
ABSTRACT:
A Dynamic Random Access Memory (DRAM) device can include a DRAM cell array configured to be periodically refreshed and a refresh control circuit that is configured to issue an internal refresh command to the DRAM cell array to provide periodic refresh of the DRAM cell array. The refresh control circuit can further include a refresh information signal to external of the DRAM device before the internal refresh command is issued to the DRAM cell array.
REFERENCES:
patent: 6667933 (2003-12-01), Tomita
Lam David
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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