Dynamic random access memory device having sense amplifier circu

Static information storage and retrieval – Read/write circuit – Precharge

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365190, 365204, 365205, 365208, 36518911, 36523004, G11C 11401

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active

054167426

ABSTRACT:
A dynamic random access memory device is equipped with sense amplifier circuits for developing differential voltage levels on associated bit line pairs, and the sense amplifier circuits are coupled through a discharging path with a ground voltage line, wherein the discharging path is implemented by a plurality of discharging sub-paths sequentially grounded by a control circuit so that the differential voltage levels are rapidly developed by smooth voltage decay on the associated discharging sub-paths, thereby improving the data access time.

REFERENCES:
patent: 4791616 (1988-12-01), Taguchi et al.
patent: 4954987 (1990-09-01), Auvinen et al.
patent: 5053998 (1991-10-01), Kannan et al.
Patent Abstracts of Japan, vol. 011, No. 386 (P-647), Dec. 17, 1987 (JP-A.varies.62 150 590).

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