Dynamic random access memory device having reduced stepped porti

Details Dynamic random access memory device having reduced stepped porti Dynamic random access memory device having reduced stepped porti

1995-03-02

1996-07-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257249, 257296, 257300, H01L 27148, H01L 29768, H01L 27108

Patent

active

055392318

ABSTRACT:
A first conductive layer and a second conductive layer are formed apart from each other on a surface of a semiconductor substrate. A first contact hole for exposing a surface of first conductive layer is formed in an interlayer insulating film. A first interconnection layer is buried in first contact hole so as to be in contact with first conductive layer. The position of the surface of first interconnection layer is the same as or lower than the surface of interlayer insulating film. The surface of first interconnection layer is covered with an insulating film. A second contact hole for exposing a surface of second conductive layer is provided in interlayer insulating film. A second conductive layer is connected to second conductive layer through second contact hole.

REFERENCES:
patent: 5012309 (1991-04-01), Nakayama
"High-Density, Folded Dram Cell," IBM Technical Disclosure Bulletin, vol. 32, No. 9B, Feb. 1990, pp. 378-381.
Kitsukawa et al., "256-Mb DRAM Circuit Technologies for File Applications," IEEE Journal of Solid-State Circuits, vol. 28, No. 11, Nov. 1993, pp. 1105-1111.

Affiliated with

Also associated with

Rating

Dynamic random access memory device having reduced stepped porti does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic random access memory device having reduced stepped porti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory device having reduced stepped porti will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-714935