Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2011-02-22
2011-02-22
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S222000, C365S230080
Reexamination Certificate
active
07894282
ABSTRACT:
Provided are a dynamic random access memory device having reduced power consumption and a method of determining a refresh cycle of the dynamic random access memory device. The method includes: selecting one or more monitoring bits during first through n-th self refresh cycles, where “n” is a natural number equal to or greater than one; detecting whether the monitoring bits have errors during (n+1)-th through m-th self refresh cycles, where “m” is a natural number equal to or greater than n+1; and adjusting an (m+1)-th self refresh cycle according to whether the monitoring bits have errors.
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Kang Uk-Song
Pyo Suk-Soo
Lam David
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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